Preparation of position-controlled crystal-silicon island arrays by means of excimer-laser annealing

被引：17

作者：

Oh, CH ^{[1
]}

Matsumura, N ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 10期

关键词：

excimer-laser annealing; lateral grain growth; poly-Si; grain size; thin-film transistors; phase shift;

D O I：

10.1143/JJAP.37.5474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-dimensionally aligned and ultralarge Si grains were grown on a glassy substrate by phase-modulated excimer-laser annealing, for the first time. Grains as large as 7 mu m were grown at predetermined positions at 500 degrees C, and were expected to be aligned with less than 30 mu m pitch. Serious effects of the laser beam divergence, which is influenced by the optical system, are pointed out.

引用

页码：5474 / 5479

页数：6

共 5 条

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[2]

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