A novel phase-modulated excimer-laser crystallization method of silicon thin films

被引：135

作者：

Oh, CH ^{[1
]}

Ozawa, M ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 5A期

关键词：

excimer-laser; lateral crystallization; poly-Si; grain size; thin-film transistors; phase modulation; phase-shift mask;

D O I：

10.1143/JJAP.37.L492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a novel excimer-laser crystallization method that uses a phase-shift mask for large-grain growth of Si thin films on the glassy substrate. Due to interference effects of the laser light, the phase difference of light at the mask results in spatial modulation of light intensity at the sample surface, which triggers the lateral grain growth. Grains as large as 7 mu m could be grown by a single-shot irradiation.

引用

页码：L492 / L495

页数：4

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