Excimer-laser-induced lateral-growth of silicon thin-films

被引：71

作者：

Ishikawa, K ^{[1
]}

Ozawa, M ^{[1
]}

Oh, CH ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3A期

关键词：

excimer-laser crystallization; poly-silicon; grain size; thin-film transistor; melt-regrowth;

D O I：

10.1143/JJAP.37.731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new excimer-laser crystallization method called the "gradient method", has been developed for large-grain growth of Si thin-films on glass. The method is based on a spatial modulation of an incident light intensity, which triggers the lateral grain growth. Grains of size as large as 5 mu m were grown by a single shot irradiation at a substrate temperature of 500 degrees C. By combining a step motion of the sample and the proposed method, the grain could be enlarged drastically.

引用

收藏

页码：731 / 736

页数：6

相关论文

共 11 条

[1] LATERAL GROWTH OF POLY-SI FILM BY EXCIMER-LASER AND ITS THIN-FILM-TRANSISTOR APPLICATION [J].

CHOI, DH ;

SADAYUKI, E ;

SUGIURA, O ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A) :70-74

[2]

IM JS, 1996, MAT RES B, V3, P39

[3] ULTRA-LARGE GRAIN-GROWTH OF SI FILMS ON GLASSY SUBSTRATE [J].

ISHIHARA, R ;

MATSUMURA, M .

ELECTRONICS LETTERS, 1995, 31 (22) :1956-1957

[4] Excimer-laser-produced single-crystal silicon thin-film transistors [J].

Ishihara, R ;

Matsumura, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10) :6167-6170

[5] EFFECTS OF LIGHT-PULSE DURATION ON EXCIMER-LASER CRYSTALLIZATION CHARACTERISTICS OF SILICON THIN-FILMS [J].

ISHIHARA, R ;

YEH, WC ;

HATTORI, T ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A) :1759-1764

[6]

KIM HJ, 1995, MATER RES SOC SYMP P, V358, P903

[7] ENLARGEMENT OF POLY-SI FILM GRAIN-SIZE BY EXCIMER LASER ANNEALING AND ITS APPLICATION TO HIGH-PERFORMANCE POLY-SI THIN-FILM TRANSISTOR [J].

KURIYAMA, H ;

KIYAMA, S ;

NOGUCHI, S ;

KUWAHARA, T ;

ISHIDA, S ;

NOHDA, T ;

SANO, K ;

IWATA, H ;

KAWATA, H ;

OSUMI, M ;

TSUDA, S ;

NAKANO, S ;

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3700-3703

[8]

KURIYAMA H, 1993, MATER RES SOC S P, V321, P657

[9] XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS [J].

SAMESHIMA, T ;

USUI, S ;

SEKIYA, M .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :276-278

[10] HIGH-MOBILITY POLY-SI THIN-FILM TRANSISTORS FABRICATED BY A NOVEL EXCIMER LASER CRYSTALLIZATION METHOD [J].

SHIMIZU, K ;

SUGIURA, O ;

MATSUMURA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) :112-117