Cross-sectional electrostatic force microscopy of semiconductor laser diodes

被引：6

作者：

Ankudinov, AV ^{[1
]}

Kotel'nikov, EY ^{[1
]}

Kantsel'son, AA ^{[1
]}

Evtikhiev, VP ^{[1
]}

Titkov, AN ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1385722

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The possibilities of electrostatic force microscopy in studying semiconductor device structures are considered. A study of the cross sections of a GaAlAs/GaAs laser diode demonstrated that the method yields the position and width of the n-p junction in the laser structure, the profile of the voltage drop across the layers constituting the structure, and the distribution of injected carriers in the waveguide. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：840 / 846

页数：7

共 17 条

[1] Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes [J].

Ankudinov, AV ;

Titkov, AN ;

Shubina, TV ;

Ivanov, SV ;

Kop'ev, PS ;

Lugauer, HJ ;

Reuscher, G ;

Keim, M ;

Waag, A ;

Landwehr, G .

APPLIED PHYSICS LETTERS, 1999, 75 (17) :2626-2628

[2] Nanorelief of an oxidized cleaved surface of a grid of alternating Ga0.7Al0.3As and GaAs heterolayers [J].

Ankudinov, AV ;

Evtikhiev, VP ;

Tokranov, VE ;

Ulin, VP ;

Titkov, AN .

SEMICONDUCTORS, 1999, 33 (05) :555-558

[3] ATOMIC RESOLUTION WITH ATOMIC FORCE MICROSCOPE [J].

BINNIG, G ;

GERBER, C ;

STOLL, E ;

ALBRECHT, TR ;

QUATE, CF .

EUROPHYSICS LETTERS, 1987, 3 (12) :1281-1286

[4] CROSS-SECTIONAL LATERAL-FORCE MICROSCOPY OF SEMICONDUCTOR HETEROSTRUCTURES AND MULTIPLE-QUANTUM WELLS [J].

BRATINA, G ;

VANZETTI, L ;

FRANCIOSI, A .

PHYSICAL REVIEW B, 1995, 52 (12) :R8625-R8628

[5] Surface charge density and evolution of domain structure in triglycine sulfate determined by electrostatic-force microscopy [J].

Hong, JW ;

Noh, KH ;

Park, S ;

Kwun, SI ;

Khim, ZG .

PHYSICAL REVIEW B, 1998, 58 (08) :5078-5084

[6]

KONNIKOV SG, 1987, SOV PHYS SEMICOND+, V21, P997

[7] CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY [J].

LEAMY, HJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :R51-R80

[8] Measurements of electric potential in a laser diode by Kelvin Probe Force Microscopy [J].

Lévêque, G ;

Girard, P ;

Skouri, E ;

Yarekha, D .

APPLIED SURFACE SCIENCE, 2000, 157 (04) :251-255

[9] HIGH-RESOLUTION CAPACITANCE MEASUREMENT AND POTENTIOMETRY BY FORCE MICROSCOPY [J].

MARTIN, Y ;

ABRAHAM, DW ;

WICKRAMASINGHE, HK .

APPLIED PHYSICS LETTERS, 1988, 52 (13) :1103-1105

[10] AN INVESTIGATION OF THE EARLY STAGES OF NATIVE OXIDE-GROWTH ON CHEMICALLY ETCHED AND SULFUR-TREATED GAAS(100) AND INP(100) SURFACES BY SCANNING TUNNELING MICROSCOPY [J].

MORIARTY, P ;

HUGHES, G .

ULTRAMICROSCOPY, 1992, 42 :956-961

← 1 2 →