Analysis of erratic bits in flash memories

被引：3

作者：

Chimenton, A ^{[1
]}

Pellati, P ^{[1
]}

Olivo, P ^{[1
]}

机构：

[1] Univ Ferrara, Dipartimento Ingn, I-44100 Ferrara, Italy

来源：

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001 | 2001年

关键词：

D O I：

10.1109/RELPHY.2001.922875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents experimental results concerning erratic behaviors in Flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight to their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection.

引用

页码：17 / 22

页数：6

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