High-thermoelectric figure of merit realized in p-type half-Heusler compounds:: ZrCoSnxSb1-x

被引：75

作者：

Sekimoto, Takeyuki ^{[1
]}

Kurosaki, Ken ^{[1
]}

Muta, Hiroaki ^{[1
]}

Yamanaka, Shinsuke ^{[1
]}

机构：

[1] Osaka Univ, Div Sustainable Energy & Environm Engn, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 25-28期

关键词：

half-Heusler; electrical resistivity; thermoelectric power; power factor; thermal conductivity; Hall measurement; effective mass; dimensionless figure of rnerit;

D O I：

10.1143/JJAP.46.L673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the thermoelectric properties of heavily Sn-doped ZrCoSb half-Heusler compounds, ZrCoSnxSb1-x (x <= 0.15), to develop p-type thermoelectric materials. With increasing Sn content x, electrical resistivity decreased and the sign of the thermoelectric power changed from negative to positive. Thermal conductivity was reduced by an alloy scattering effect between Sn and Sb. A high figure of merit (ZT) was obtained: ZT = 0.45 at 958 K in ZrCoSn0.1Sb0.9. This ZT is approximately 2-fold higher than those of the p-type half-Heusler compounds that have been reported to date.

引用

页码：L673 / L675

页数：3

共 19 条

[1] GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN [J].

ALIEV, FG ;

BRANDT, NB ;

MOSHCHALKOV, VV ;

KOZYRKOV, VV ;

SKOLOZDRA, RV ;

BELOGOROKHOV, AI .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1989, 75 (02) :167-171

[2]

BHANDARI CM, 1995, CRC HDB THERMOELECTR, P33

[3] Electrical properties of some (1,1,1) intermetallic compounds [J].

Cook, BA ;

Harringa, JL .

JOURNAL OF MATERIALS SCIENCE, 1999, 34 (02) :323-327

[4] Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C -: art. no. 042106 [J].

Culp, SR ;

Poon, SJ ;

Hickman, N ;

Tritt, TM ;

Blumm, J .

APPLIED PHYSICS LETTERS, 2006, 88 (04) :1-3

[5]

GORFRYK K, 2005, PHYS REV B, V72, DOI UNSP 094409

[6] Efficient dopants for ZrNiSn-based thermoelectric materials [J].

Hohl, H ;

Ramirez, AP ;

Goldmann, C ;

Ernst, G ;

Wölfing, B ;

Bucher, E .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (07) :1697-1709

[7] The effects of quaternary additions on thermoelectric properties of TiNiSn-based half-Heusler alloys [J].

Katayama, T ;

Kim, SW ;

Kimura, Y ;

Mishima, Y .

JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (11) :1160-1165

[8] Thermoelectric properties of p-type half-Heusler compound HfPtSn and improvement for high-performance by Ir and Co additions [J].

Kimura, Yoshisato ;

Zama, Akihisa .

APPLIED PHYSICS LETTERS, 2006, 89 (17)

[9]

Kimura Y, 2006, MATER RES SOC SYMP P, V886, P331

[10] Antimonides with the half-Heusler structure: New thermoelectric materials [J].

Mastronardi, K ;

Young, D ;

Wang, CC ;

Khalifah, P ;

Cava, RJ ;

Ramirez, AP .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1415-1417

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