Impact of surfaces on the optical properties of GaAs nanowires

被引：214

作者：

Demichel, O. ^{[1
,2
]}

Heiss, M. ^{[1
,3
,4
]}

Bleuse, J. ^{[2
]}

Mariette, H. ^{[2
]}

Fontcuberta i Morral, A. ^{[1
,3
,4
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Mat Semicond, Inst Mat, CH-1015 Lausanne, Switzerland

[2] CEA INAC SP2M, CEA CNRS Grp, FR-38054 Grenoble, France

[3] Tech Univ Munich, Dept Phys, D-80578 Garching, Germany

[4] Tech Univ Munich, Walter Schottky Inst, D-80578 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 20期

关键词：

SILICON NANOWIRES; RECOMBINATION VELOCITY; FACETS; PASSIVATION; DENSITY; GROWTH;

D O I：

10.1063/1.3519980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of surfaces on the optical properties of GaAs nanowires is evidenced by comparing nanowires with or without an AlGaAs capping shell as a function of the diameter. We find that the optical properties of unpassivated nanowires are governed by Fermi-level pinning, whereas, the optical properties of passivated nanowires are mainly governed by surface recombinations. Finally, we measure a surface recombination velocity of 3 x 10(3) cm s(-1) one order of magnitude lower than values previously reported for (110) GaAs surfaces. These results will serve as guidance for the application of nanowires in solar cell and light emitting devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3519980]

引用

页数：3

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