RAMAN-SCATTERING DETERMINATION OF FREE CARRIER CONCENTRATION AND SURFACE DEPLETION LAYER IN (100) P-GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

FUKASAWA, R ^{[1
]}

WAKAKI, M ^{[1
]}

OHTA, K ^{[1
]}

OKUMURA, H ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 04期

关键词：

D O I：

10.1143/JJAP.25.652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：652 / 653

页数：2

共 10 条

[1] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS [J].

ABSTREITER, G ;

BAUSER, E ;

FISCHER, A ;

PLOOG, K .

APPLIED PHYSICS, 1978, 16 (04) :345-352

[2] RAMAN-SPECTRA OF A COUPLED LO PHONON-DAMPED PLASMON MODE IN N-GAAS [J].

KATAYAMA, S ;

MURASE, K ;

KAWAMURA, H .

SOLID STATE COMMUNICATIONS, 1975, 16 (07) :945-948

[3] OBSERVATION OF INTERACTION OF PLASMONS WITH LONGITUDINAL OPTICAL PHONONS IN GAAS [J].

MOORADIAN, A ;

WRIGHT, GB .

PHYSICAL REVIEW LETTERS, 1966, 16 (22) :999-+

[4] RAMAN-SCATTERING BY COUPLED LO-PHONON PLASMON MODES AND FORBIDDEN TO-PHONON RAMAN-SCATTERING IN HEAVILY DOPED P-TYPE GAAS [J].

OLEGO, D ;

CARDONA, M .

PHYSICAL REVIEW B, 1981, 24 (12) :7217-7232

[5] RAMAN-SCATTERING BY WAVE-VECTOR DEPENDENT COUPLED PLASMON - LO PHONONS OF N-GAAS [J].

PINCZUK, A ;

ABSTREITER, G ;

TROMMER, R ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1977, 21 (10) :959-962

[6] RAMAN-SCATTERING STUDIES OF SURFACE SPACE-CHARGE LAYERS AND SCHOTTKY-BARRIER FORMATION IN INP [J].

PINCZUK, A ;

BALLMAN, AA ;

NAHORY, RE ;

POLLACK, MA ;

WORLOCK, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1168-1170

[7] STUDY OF ION-IMPLANTATION DAMAGE IN GAAS-BE AND INP-BE USING RAMAN-SCATTERING [J].

RAO, CSR ;

SUNDARAM, S ;

SCHMIDT, RL ;

COMAS, J .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1808-1815

[8] PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATION [J].

SAKAMOTO, T ;

FUNABASHI, H ;

OHTA, K ;

NAKAGAWA, T ;

KAWAI, NJ ;

KOJIMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L657-L659

[9] BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J].

SPITZER, WG ;

MEAD, CA .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) :3061-+

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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