Properties of indium tin oxide films with indium tin modulation layers prepared by nano-scale controlled reactive magnetron sputtering

被引：8

作者：

Alam, AHMZ

Takashima, Y

Sasaki, K

Hata, T

机构：

[1] Faculty of Technology, Kanazawa University, Kanazawa 920

来源：

THIN SOLID FILMS | 1996年 / 279卷 / 1-2期

关键词：

indium; indium oxide; sputtering; tin;

D O I：

10.1016/0040-6090(95)08166-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new preparation method for tin-doped indium oxide (ITO) films containing nano-scale indium tin (IT) sandwich layer(s) by the combined use of reactive and non-reactive d.c, magnetron sputtering is proposed. The film properties vary markedly with the number of IT layers and the thickness ratio m of the IT layer to the ITO layer. The lowest resistivity of a 100 nm film is 5.8 x 10(-4) Omega cm with IT layers, but 9.8 x 10(-4) Omega cm without IT layers. The transparency of the film is greater than 90% in the visible region.

引用

页码：131 / 134

页数：4

共 7 条

[1]

COUTTS TJ, 1982, J VAC SCI TECHNOL B, V2, P140

[2]

COUTTS TJ, 1990, IEEE ELECTRON LETT, V26, P660

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