C-60-doped N,N-'-bis(l-naphthyl)-N, N-'-diphenyl-1, 1(')-biphenyl-4, 4(')-diamine(NPB) film is studied as hole injection layer between indium tin oxide (ITO) and NPB. The doped films on ITO substrates were found to be thermally stable after being annealed at temperatures up to 120 degrees C. This was attributed to a strong interaction between NPB and C-60 providing a dipole force crosslinking NPB molecules, similar to a crosslinked thermoset polymer networks. Furthermore, the C-60-doped NPB p-type hole injection layers yield devices having better efficiency and low driving voltage as compared with standard devices with CuPc as the hole injection layers. (C) 2005 American Institute of Physics.