Calculation of sputtering rate during a plasma-assisted process

被引：12

作者：

Hsieh, JH ^{[1
]}

Li, C ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch MPE, Singapore 639798, Singapore

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 08期

关键词：

sputtering rate; Monte Carlo simulation; Cr thin film;

D O I：

10.1143/JJAP.42.5295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An attempt was made to calculate the sputtering rate of a cathode during a plasma-assisted deposition or etching process. In this attempt, an approach combining sputtering models and Monte Carlo simulation was developed. By using a Cr target as an example, the approach was shown to be satisfactory.

引用

页码：5295 / 5298

页数：4

共 12 条

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