Characteristics of silicon nitride after O2 plasma surface treatment for pH-ISFET applications

被引：35

作者：

Yin, LT

Chou, JC ^{[1
]}

Chung, WY

Sun, TP

Hsiung, SK

机构：

[1] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Toulin 640, Taiwan

[2] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 320, Taiwan

[3] Natl Chi Nan Univ, Dept Elect Engn, Nantou 545, Taiwan

[4] Chung Yuan Christian Univ, Dept Biomed Engn, Chungli 320, Taiwan

来源：

IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING | 2001年 / 48卷 / 03期

关键词：

enzyme immobilization; ISFET; plasma treatment; pH sensitivity; silicon nitride;

D O I：

10.1109/10.914797

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

Silicon nitride (Si3N4) sensing gate pa-ion-selective field effect transistors (ISFETs) were treated by 2,54-GHz microwave O-2 plasma, the results show the ISFET sensitivity has an advantage up to 24% increment after the plasma treatment. Electron spectroscopy for chemical analysis (ESCA) is used to make sure that the plasma treatment is not just a native oxide cleaning procedure, The samples, which were immobilized with glutaraldehyde used as a bifunctional reagent and 3-aminopropyltriethoxysilane used as an adhesion promoter were studied. The binding force between the glucose oxidase and glutaraldehyde immobilized samples, and the element concentrations of nitrogen in 3-aminopropyltriethoxysilane immobilized samples are higher which were treated by plasma.

引用

页码：340 / 344

页数：5

共 12 条

[1] FIELD-EFFECT TRANSISTOR SENSITIVE TO PENICILLIN [J].