Heteroepitaxial growth of transition metal oxides using UHV laser molecular beam epitaxy

被引：33

作者：

Gross, R ^{[1
]}

Klein, J ^{[1
]}

Wiedenhorst, B ^{[1
]}

Höfener, C ^{[1
]}

Schoop, U ^{[1
]}

Philipp, JB ^{[1
]}

Schonecke, M ^{[1
]}

Herbstritt, F ^{[1
]}

Alff, L ^{[1
]}

Lu, YF ^{[1
]}

Marx, A ^{[1
]}

Schymon, S ^{[1
]}

Thienhaus, S ^{[1
]}

Mader, W ^{[1
]}

机构：

[1] Univ Cologne, Inst Phys 2, D-50937 Cologne, Germany

来源：

SUPERCONDUCTING AND RELATED OXIDES: PHYSICS AND NANOENGINEERING IV | 2000年 / 4058卷

关键词：

laser molecular beam epitaxy; high pressure RHEED system; RHEED oscillations; heteroepitaxy; transition metal oxides; strain effects; transmission electron microscopy; oxide electronics; grain boundaries;

D O I：

10.1117/12.397845

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have grown heteroepitaxial thin film structures composed of various transition metal oxides such as the colossal magnetoresistance manganites, superconducting cuprates, ruthenates as well as insulating titanates on SrTiO3, NdGaO3 and LaAlO3 substrates using a UHV laser molecular beam epitaxy (laser-MBE) system. The film growth was controlled in-situ using high pressure RHEED as well as scanning probe techniques (AFM/STM). The fabricated films were analyzed by x-ray diffraction, transmission electron microscopy and the measurement of the transport properties. The manganite, ruthenate and titanate thin film structures show good epitaxy with small mosaic spread. The observation of RHEED oscillations during the film deposition indicates a layer by layer growth mode. This is further supported by the observed small surface roughness of typically less than 3 nm rms for a 100 nm thick film. We also could find a clear correlation between the observed RHEED pattern and the surface morphology measured by AFM/STM. Our analysis shows that UHV laser MBE is well suited for the fabrication of complicated heteroepitaxial thin film structures required for oxide electronics.

引用

页码：278 / 294

页数：17

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[21] EXTRINSIC OR INTRINSIC CONDUCTION IN CUPRATES - ANISOTROPY, WEAK, AND STRONG LINKS [J].