Electrical and optical properties of Al-doped transparent conducting ZnO films deposited on organic substrate by RF sputtering

This paper presents the structural, electrical and optical properties of transparent conducting At-doped ZnO films prepared on organic substrate by RF sputtering. Polycrystalline ZnO:Al films with good adherence to the substrate having a (0 0 2) preferred orientation have been obtained with resistivities in the range from 4.1 x 10(-3) to 5.3 x 10(-4) Ohm cm, with carrier densities more than 2.6 x 10(20) cm(-3) and Hall mobilities between 5.78 and 13.11 cm(2) V-1 s(-1) for films deposited on polyisocyanate (PI) substrate. The average transmittance reaches 82% for film deposited on polypropylene adipate (PPA) substrate in the visible spectrum. The scattering mechanisms of electronic carriers in these films are discussed based on temperature dependence of the mobility measured over a temperature range 30-300 K. (C) 2001 Elsevier Science B.V. All rights reserved.