Ab initio calculation of second-harmonic-generation at the Si(100) surface -: art. no. 205406

被引:31
作者
Mendoza, BS [1 ]
Palummo, M [1 ]
Onida, G [1 ]
Del Sole, R [1 ]
机构
[1] Univ Roma Tor Vergata, Dipartimento Fis, Ist Nazl Fis Mat, Rome, Italy
关键词
D O I
10.1103/PhysRevB.63.205406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a microscopic, first-principles calculation of the second-harmonic spectra of clean and Hydrogenated Si(100) surfaces. The differences between theoretical spectra obtained for different reconstructions, namely the 2 X 1 and the c(4 X 2) ones, are dramatically enhanced with respect to those obtained in linear optical response. The calculated spectral features are analyzed in detail, studying their relations with those of bulk and surface linear optical spectra. The inclusion of quasiparticle effects within the scissors operator approximation yields theoretical spectra in good agreement with the experiments.
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页数:6
相关论文
共 42 条
[1]   Ab initio second-harmonic susceptibilities of semiconductors: Generalized tetrahedron method and quasiparticle effects [J].
Adolph, B ;
Bechstedt, F .
PHYSICAL REVIEW B, 1998, 57 (11) :6519-6526
[2]  
AKTSIPETROV OA, 1986, ZH EKSP TEOR FIZ, V64, P167
[3]   Ab initio calculation of excitonic effects in the optical spectra of semiconductors [J].
Albrecht, S ;
Reining, L ;
Del Sole, R ;
Onida, G .
PHYSICAL REVIEW LETTERS, 1998, 80 (20) :4510-4513
[4]   DC-electric-field-modified second-harmonic generation at the Si(100) surface [J].
Arzate, N ;
Mejía, JE ;
Mendoza, BS ;
Del Sole, R .
APPLIED PHYSICS B-LASERS AND OPTICS, 1999, 68 (03) :629-632
[5]   Microscopic study of surface second-harmonic generation from a clean Si(100) c(4X2) surface -: art. no. 125303 [J].
Arzate, N ;
Mendoza, BS .
PHYSICAL REVIEW B, 2001, 63 (12)
[6]   Optical absorption of insulators and the electron-hole interaction: An ab initio calculation [J].
Benedict, LX ;
Shirley, EL ;
Bohn, RB .
PHYSICAL REVIEW LETTERS, 1998, 80 (20) :4514-4517
[7]   Second-harmonic spectroscopy of a Si(001) surface during calibrated variations in temperature and hydrogen coverage [J].
Dadap, JI ;
Xu, Z ;
Hu, XF ;
Downer, MC ;
Russell, NM ;
Ekerdt, JG ;
Aktsipetrov, OA .
PHYSICAL REVIEW B, 1997, 56 (20) :13367-13379
[8]   IDENTIFICATION OF STRAINED SILICON LAYERS AT SI-SIO2 INTERFACES AND CLEAN SI SURFACES BY NONLINEAR-OPTICAL SPECTROSCOPY [J].
DAUM, W ;
KRAUSE, HJ ;
REICHEL, U ;
IBACH, H .
PHYSICAL REVIEW LETTERS, 1993, 71 (08) :1234-1237
[9]   NONLINEAR-OPTICAL SPECTROSCOPY AT SILICON INTERFACES [J].
DAUM, W ;
KRAUSE, HJ ;
REICHEL, U ;
IBACH, H .
PHYSICA SCRIPTA, 1993, T49B :513-518
[10]   OPTICAL-PROPERTIES OF SEMICONDUCTORS WITHIN THE INDEPENDENT-QUASI-PARTICLE APPROXIMATION [J].
DELSOLE, R ;
GIRLANDA, R .
PHYSICAL REVIEW B, 1993, 48 (16) :11789-11795