Scanning transmission-electron microscopy study of InAs/GaAs quantum dots

被引：110

作者：

Siverns, PD ^{[1
]}

Malik, S

McPherson, G

Childs, D

Roberts, C

Murray, R

Joyce, BA

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England

[2] Univ Liverpool, Dept Mat, Liverpool L69 3BX, Merseyside, England

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.58.R10127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present results obtained from a scanning transmission-electron microscopy study of InAs/GaAs quantum dot (QD) layers. It is shown that the QD's are embedded within an InxGa1-xAs confining layer following overgrowth with GaAs. Using energy dispersive x-ray analysis (EDX) the QD dimensions can be measured with reasonable accuracy and are not affected by strain contrast. In QD bilayers where the dots are uncorrelated along the growth direction, a comparison of the indium EDX signals from the confining layer and a dot allow us to estimate the compositions of these regions as In0.07Ga0.93As and In0.31Ga0.69As, respectively. [S0163-1829(98)50636-4].

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页码：10127 / 10130

页数：4

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