Band-Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization

被引：252

作者：

Minder, Nikolas A. ^{[2
,3
]}

Ono, Shimpei ^{[2
,3
,4
]}

Chen, Zhihua ^{[1
]}

Facchetti, Antonio ^{[1
,5
,6
]}

Morpurgo, Alberto F. ^{[2
,3
]}

机构：

[1] Polyera Corp, Skokie, IL 60077 USA

[2] Univ Geneva, DPMC, CH-1211 Geneva, Switzerland

[3] Univ Geneva, GAP, CH-1211 Geneva, Switzerland

[4] Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan

[5] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[6] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 04期

基金：

瑞士国家科学基金会;

关键词：

organic single-crystal; field-effect transistor; n-type; Hall effect; band-like transport; FIELD-EFFECT TRANSISTORS; SINGLE-CRYSTAL TRANSISTORS; CHARGE-TRANSPORT; N-TYPE; GATE DIELECTRICS; THIN-FILMS; SEMICONDUCTORS; MOBILITY; STABILITY; CIRCUITS;

D O I：

10.1002/adma.201103960

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The Hall effect and an increase of field-effect mobility with decreasing temperature is observerd in n-channel single-crystal organic field-effect transistors (OFETs). A quantitative analysis of these findings, together with results on different p-channel transistors, indicate the importance of the semiconductor molecular polarizability and the structure of the charge transport layers in the crystal for the observation of band-like transport in OFETs.

引用

页码：503 / +

页数：7

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