Reversible insulator-to-metal transition in p+-type mesoporous silicon induced by the adsorption of ammonia

被引：45

作者：

Chiesa, M

Amato, G

Boarino, L

Garrone, E

Geobaldo, F

Giamello, E

机构：

[1] Univ Turin, Dipartimento Chim, IFM, Inst Nazl Fis Mat, I-10125 Turin, Italy

[2] Ist Elettrotecnico Nazl Galileo Ferraris, Quantum Res Lab, I-10135 Turin, Italy

[3] Politecn Torino, Dipartimento Sci Mat & Ingn Chim, I-10129 Turin, Italy

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2003年 / 42卷 / 41期

关键词：

ammonia; EPR spectroscopy; insulators; semiconductors; silicon;

D O I：

10.1002/anie.200352114

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Gas works wonders! Conduction-band electrons can be generated in p +-type mesoporous crystalline silicon through the adsorption of ammonia (see scheme). Free-carrier concentration increases with increasing NH3 adsorption to a critical value, where a reversible insulator-to-metal transition occurs.

引用

收藏

页码：5032 / 5035

页数：4

相关论文

共 30 条

[1] Electronic transport in porous silicon of low porosity made p+ substrate [J].

Balagurov, LA ;

Yarkin, DG ;

Petrova, EA .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :127-131

[2] Local environment of Boron impurities in porous silicon and their interaction with NO2 molecules -: art. no. 205308 [J].

Boarino, L ;

Geobaldo, F ;

Borini, S ;

Rossi, AM ;

Rivolo, P ;

Rocchia, M ;

Garrone, E ;

Amato, G .

PHYSICAL REVIEW B, 2001, 64 (20)

[3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[4] ELECTRON SPIN RESONANCE ABSORPTION IN METALS .2. THEORY OF ELECTRON DIFFUSION AND THE SKIN EFFECT [J].

DYSON, FJ .

PHYSICAL REVIEW, 1955, 98 (02) :349-359

[5] THE TRANSITION TO THE METALLIC STATE [J].

EDWARDS, PP ;

SIENKO, MJ .

ACCOUNTS OF CHEMICAL RESEARCH, 1982, 15 (03) :87-93

[6] A perspective on the metal-nonmetal transition [J].

Edwards, PP ;

Johnston, RL ;

Hensel, F ;

Rao, CNR ;

Tunstall, DP .

SOLID STATE PHYSICS - ADVANCES IN RESEARCH AND APPLICATIONS, VOL 52, 1999, 52 :229-338

[7] PARAMAGNETIC RESONANCE ABSORPTION FROM ACCEPTORS IN SILICON [J].

FEHER, G ;

HENSEL, JC ;

GERE, EA .

PHYSICAL REVIEW LETTERS, 1960, 5 (07) :309-311

[8] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].

FEHER, G .

PHYSICAL REVIEW, 1959, 114 (05) :1219-1244

[9] IR detection of NO2 using p+ porous silicon as a high sensitivity sensor [J].

Geobaldo, F ;

Onida, B ;

Rivolo, P ;

Borini, S ;

Boarino, L ;

Rossi, A ;

Amato, G ;

Garrone, E .

CHEMICAL COMMUNICATIONS, 2001, (21) :2196-2197

[10] Silicon-based visible light-emitting devices integrated into microelectronic circuits [J].

Hirschman, KD ;

Tsybeskov, L ;

Duttagupta, SP ;

Fauchet, PM .

NATURE, 1996, 384 (6607) :338-341