Microstructure of the GaSb-on-InAs heterojunction examined with cross-sectional scanning tunneling microscopy

被引：37

作者：

Harper, J ^{[1
]}

Weimer, M

Zhang, D

Lin, CH

Pei, SS

机构：

[1] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA

[2] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 19期

关键词：

D O I：

10.1063/1.122596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the atomic-scale morphology and composition of the GaSb-on-InAs heterojunction with cross-sectional scanning tunneling microscopy, and find a new "white-noise'' component in the wave-vector-dependent roughness spectrum under epitaxial growth conditions routinely employed for type-II quantum well and interband cascade lasers. This phenomenon is associated with random substitutional defects at the interface whose concentration exceeds that due to bulk cross incorporation. We propose these defects originate from the thermodynamically favored but incomplete replacement of As by Sb at the InAs surface during anion exchange. (C) 1998 American Institute of Physics. [S0003-6951(98)02745-4].

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页码：2805 / 2807

页数：3

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