OPTICAL AND STRUCTURAL INVESTIGATIONS OF INTERMIXING REACTIONS AT THE INTERFACES OF INAS/ALSB AND INAS/GASB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：70

作者：

SCHMITZ, J

WAGNER, J

FUCHS, F

HERRES, N

KOIDL, P

RALSTON, JD

机构：

[1] Fraunhofer Institut für Angewandte Festkörperphysik, Freiburg, D-79108

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80061-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Several issues related to the interface structure in molecular-beam epitaxially grown InAs/AlSb and InAs/GaSb heterostructures are investigated by Raman scattering, photoluminescence and X-ray measurements. The measurements reveal differing degrees of layer intermixing at the interfaces (IFs), greatest for AlAs-like IFs in the InAs/AlSb material system, less pronounced for GaAs-like IFs in the InAs/GaSb material system, and smallest for InSb like IFs in both systems. This intermixing is both thermodynamically favoured and, in addition, driven by a lowering of the strain-induced component of the surface energy.

引用

页码：858 / 862

页数：5

共 15 条

[1]

[Anonymous], 1991, SEMICONDUCTORS GROUP

[2]

Barin I., 1989, THERMOCHEMICAL DATA, Vthird

[3] RESONANT RAMAN-SCATTERING AND SPECTRAL ELLIPSOMETRY ON INAS GASB SUPERLATTICES WITH DIFFERENT INTERFACES [J].