INTERFACE CHARACTERIZATION OF INAS/ALSB HETEROSTRUCTURES BY FAR-INFRARED OPTICAL SPECTROSCOPY

被引：13

作者：

FUCHS, F ^{[1
]}

SCHMITZ, J ^{[1
]}

SCHWARZ, K ^{[1
]}

WAGNER, J ^{[1
]}

RALSTON, JD ^{[1
]}

KOIDL, P ^{[1
]}

GADALETA, C ^{[1
]}

SCAMARCIO, G ^{[1
]}

机构：

[1] UNIV BARI, DIPARTIMENTO FIS, GNEQP, I-70126 BARI, ITALY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 16期

关键词：

D O I：

10.1063/1.112793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present high resolution measurements of the far infrared reflectance and absorbance of InAs/AlSb type II heterostructures, grown on GaAs substrates by molecular beam epitaxy. Quantum wells grown with AlAs-like interfaces show broadening and blue shifting of the InAs transverse optical (TO) phonon compared to samples with InSb-like interfaces. This is explained by incorporation of arsenic in the AlSb barriers. The InSb-interface mode, recently reported from Raman investigations, could be observed in the multiple quantum well. Two lines are observed, which are attributed to the normal (AlSb on InAs) and the inverted (InAs on AlSb) interfaces. (C) 1994 American Institute of Physics.

引用

页码：2060 / 2062

页数：3

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