Spatially direct and indirect transitions observed for Si/Ge quantum dots

被引：42

作者：

Larsson, M ^{[1
]}

Elfving, A ^{[1
]}

Holtz, PO ^{[1
]}

Hansson, GV ^{[1
]}

Ni, WX ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 26期

关键词：

D O I：

10.1063/1.1587259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of Ge quantum dots embedded in Si were investigated by means of photoluminescence, with temperature and excitation power density as variable parameters. Two different types of recombination processes related to the Ge quantum dots were observed. A transfer from the spatially indirect to the spatially direct recombination in the type-II band lineup was observed with increasing temperature. A blueshift of the spatially indirect Ge quantum-dot-emission energy with increasing excitation power is ascribed to band bending at the type-II Si/Ge interface for high carrier densities. Comparative studies were performed on uncapped Ge dot structures. (C) 2003 American Institute of Physics.

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页码：4785 / 4787

页数：3

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共 9 条

[1] TYPE-II BAND ALIGNMENT IN SI/SI1-XGEX QUANTUM-WELLS FROM PHOTOLUMINESCENCE LINE SHIFTS DUE TO OPTICALLY INDUCED BAND-BENDING EFFECTS - EXPERIMENT AND THEORY [J].

BAIER, T ;

MANTZ, U ;

THONKE, K ;

SAUER, R ;

SCHAFFLER, F ;

HERZOG, HJ .

PHYSICAL REVIEW B, 1994, 50 (20) :15191-15196

[2] Aspects of Ge/Si self-assembled quantum dots [J].

Boucaud, P ;

Le Thanh, V ;

Yam, V ;

Sauvage, S ;

Meneceur, N ;

Elkurdi, M ;

Débarre, D ;

Bouchier, D .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3) :36-44

[3] Optical study of germanium nanostructures grown on a Si(118) vicinal substrate [J].

Bremond, G ;

Serpentini, M ;

Souifi, A ;

Guillot, G ;

Jacquier, B ;

Abdallah, M ;

Berbezier, I ;

Joyce, B .

MICROELECTRONICS JOURNAL, 1999, 30 (4-5) :357-362

[4] Si/Ge nanostructures [J].

Brunner, K .

REPORTS ON PROGRESS IN PHYSICS, 2002, 65 (01) :27-72

[5] Application of numerical exciton-wave-function calculations to the question of band alignment in Si/Si1-xGex quantum wells [J].

Penn, C ;

Schäffler, F ;

Bauer, G ;

Glutsch, S .

PHYSICAL REVIEW B, 1999, 59 (20) :13314-13321

[6] Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation [J].

Schmidt, OG ;

Eberl, K .

PHYSICAL REVIEW B, 2000, 61 (20) :13721-13729

[7] Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands [J].

Schmidt, OG ;

Eberl, K ;

Rau, Y .

PHYSICAL REVIEW B, 2000, 62 (24) :16715-16720

[8] THEORETICAL CALCULATIONS OF HETEROJUNCTION DISCONTINUITIES IN THE SI/GE SYSTEM [J].

VAN DE WALLE, CG ;

MARTIN, RM .

PHYSICAL REVIEW B, 1986, 34 (08) :5621-5634

[9] Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001) [J].

Wan, J ;

Jin, GL ;

Jiang, ZM ;

Luo, YH ;

Liu, JL ;

Wang, KL .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1763-1765