Electrical analyses of germanium MIS structure and spectroscopic measurement of the interface trap density in an insulator/germanium interface at room temperature

被引：16

作者：

Fukuda, Yukio ^{[1
]}

Otani, Yohei

Itayarna, Yasuhiro

Ono, Toshiro

机构：

[1] Tokyo Univ Sci, Fac Syst Engn, Suwa 3910292, Japan

[2] Hirosaki Univ, Fac Sci & Technol, Hirosaki, Aomori 0368561, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 11期

关键词：

capacitance technique; conductance technique; diffusion conductance; germanium (Ge); interface trap; intrinsic carrier density; MIS capacitor;

D O I：

10.1109/TED.2007.907111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present an equivalent circuit model of a germanium (Ge) MIS structure that is biased in the inversion region, which includes the effects of the high intrinsic carrier density and high diffusion-limited conductance of the Ge substrate at room temperature. The model can successfully express the gate bias and frequency dependences of the capacitance characteristics that are specific to the Ge MIS capacitor. Moreover, it will be shown that the interface trap density and its gate bias dependence in the inversion region can be spectroscopically determined from the gate bias and measurement frequency dependences of the equivalent parallel conductance of the Ge surface.

引用

页码：2878 / 2883

页数：6