Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

被引：46

作者：

Yu, DS

Huang, CH

Chin, A ^{[1
]}

Zhu, CX

Li, MF

Cho, BJ

Kwong, DL

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[3] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78752 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 03期

关键词：

Ge; Ge-on-insulator (GOI); MOSFET; NiGe; NiSi;

D O I：

10.1109/LED.2004.824249

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-kappa, A1(2)O(3)/Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the A1(2)O(3)-GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with A1(2)O(3)-Si MOSFETs. Additionally, A1(2) O-3-GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than A1(2)O(3)-Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500 degreesC rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-kappa to minimize interfacial reactions and crystallization of the high-kappa material, and oxygen penetration in high-kappa MOSFETs.

引用

页码：138 / 140

页数：3

共 15 条

[1] High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10Å [J].

Chin, A ;

Wu, YH ;

Chen, SB ;

Liao, CC ;

Chen, WJ .

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :16-17

[2]

CHIN A, 1999, VLSI S, P135

[3]

Choi R, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P613, DOI 10.1109/IEDM.2002.1175914

[4]

HUANG CH, 2003, VLSI S, P119

[5]

Kedzierski J, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P247, DOI 10.1109/IEDM.2002.1175824

[6]

Lee J, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P359, DOI 10.1109/IEDM.2002.1175852

[7] Fully silicided NiSi gate on La2O3 MOSFETs [J].

Lin, CY ;

Ma, MW ;

Chin, A ;

Yeo, YC ;

Zhu, CX ;

Li, MF ;

Kwong, DL .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :348-350

[8] Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si [J].

Lin, CY ;

Chen, WJ ;

Lai, CH ;

Chin, A ;

Liu, J .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (08) :464-466

[9] The strong degradation of 30 Å gate oxide integrity contaminated by copper [J].

Lin, YH ;

Chen, YC ;

Chan, KT ;

Pan, FM ;

Hsieh, IJ ;

Chin, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (04) :F73-F76

[10]

LOW T, 2003, VLSI, P115

← 1 2 →