Trap characterization in buried-gate n-channel 6H-SiC JFETs

被引：4

作者：

Meneghesso, G ^{[1
]}

Chini, A

Verzellesi, G

Cavallini, A

Canali, C

Zanoni, E

机构：

[1] Univ Padua, DEI, I-35131 Padua, Italy

[2] INFM, Padua, Italy

[3] Univ Modena, Dipartimento Sci Ingn, I-90541100 Modena, Italy

[4] INFM, Modena, Italy

[5] Univ Bologna, Dipartmento Fis, Bologna, Italy

[6] INFM, Bologna, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 09期

关键词：

6H-SiC; JFETs; transconductance frequency dispersion; traps characterization;

D O I：

10.1109/55.944330

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a detailed characterization of deep traps present in buried gate, n-channel 6H-SiC JFETs, based on transconductance measurements as a function of frequency. Four different deep levels have been identified, which are characterized by activation energies of 0.16, 0.18, 0.28, and 0.54 eV. Furthermore, based on the transconductance frequency dispersion features (upward or downward dispersion), we have been able to infer that three deep levels (0.16, 0.18 and 0.54 eV) are hole traps localized in the p-gate layer and one (0.28 eV) is an electron trap localized in the n-channel.

引用

页码：432 / 434

页数：3

共 16 条

[1] Trends in power semiconductor devices
Baliga, BJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (10) : 1717 - 1731
[2] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES
BHATNAGAR, M
BALIGA, BJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) : 645 - 655
[3] TRAP-RELATED EFFECTS IN ALGAAS GAAS HEMTS
CANALI, C
MAGISTRALI, F
PACCAGNELLA, A
SANGALLI, M
TEDESCO, C
ZANONI, E
[J]. IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1991, 138 (01): : 104 - 108
[4] High-voltage operation of field-effect transistors in silicon carbide
Konstantinov, AO
Ivanov, PA
Nordell, N
Karlsson, S
Harris, CI
[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (11) : 521 - 522
[5] LOW-FIELD LOW-FREQUENCY DISPERSION OF TRANSCONDUCTANCE IN GAAS-MESFETS WITH IMPLICATIONS FOR OTHER RATE-DEPENDENT ANOMALIES
LADBROOKE, PH
BLIGHT, SR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (03) : 257 - 267
[6] Growth and investigation of the big area Lely-grown substrates
Lebedev, AA
Tregubova, AS
Chelnokov, VE
Scheglov, MP
Glagovskii, AA
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 291 - 295
[7] Modeling the electrical characteristics of n-channel 6H-SiC junction-field-effect transistors as a function of temperature
McLean, FB
Tipton, CW
McGarrity, JM
Scozzie, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) : 545 - 552
[8] Breakdown and low-temperature anomalous effects in 6H SiC JFETs
Meneghesso, G
Bartolini, A
Verzellesi, G
Cavallini, A
Castaldini, A
Canali, C
Zanoni, E
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 695 - 698
[9] Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors
Meneghesso, G
Paccagnella, A
Haddab, Y
Canali, C
Zanoni, E
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (10) : 1411 - 1413
[10] High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes
Neudeck, PG
Fazi, C
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) : 1219 - 1225

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