Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors

被引:39
作者
Meneghesso, G
Paccagnella, A
Haddab, Y
Canali, C
Zanoni, E
机构
[1] SWISS FED INST TECHNOL,EPFL,INST MICROSYST,CH-1015 LAUSANNE,SWITZERLAND
[2] UNIV MODENA,DIPARTIMENTO SCI INGN,I-41100 MODENA,ITALY
关键词
D O I
10.1063/1.117598
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the hot-electrons induced degradation in AlGaAs/GaAs high electron mobility transistors (HEMTs), consisting of a decrease in the drain current and an increase in the parasitic drain resistance, The amount of the degradation is proportional to the impact-ionization rate which is related to the electron energy. Transconductance dispersion measurements and drain current deep level transient spectroscopy (DLTS) have been used to identify interface traps which are located at the AlGaAs/GaAs interface in the gate-drain access region and are the causes of the observed degradation. (C) 1996 American Institute of Physics.
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页码:1411 / 1413
页数:3
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