ELECTRICAL-PROPERTIES OF INTERFACE-TRAPS IN SELECTIVELY DOPED ALGAAS/GAAS HETEROSTRUCTURES

被引：10

作者：

TAKIKAWA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 12期

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D O I：

10.1143/JJAP.26.2026

中图分类号：

O59 [应用物理学];

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页码：2026 / 2032

页数：7

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