DETERMINATION OF 2-D ELECTRON-GAS CARRIER MOBILITY IN SHORT GATE-LENGTH MODFETS BY DIRECT ELIMINATION OF PARASITIC RESISTANCE EFFECTS

被引：13

作者：

LIU, SM

DAS, MB

KOPP, W

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 11期

关键词：

D O I：

10.1109/EDL.1985.26242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：594 / 596

页数：3

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