IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HEMTS

被引:24
作者
CANALI, C
PACCAGNELLA, A
PISONI, P
TEDESCO, C
TELAROLI, P
ZANONI, E
机构
[1] Dipartimento di Elettronica e Informatica, Universita di Padova, 35131, Padova
关键词
D O I
10.1109/16.97428
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The impact ionization current in AlGaAs/GaAs HEMT's is evaluated by means of measurements of the gate current at high drain voltages. A previously reported method to calculate impact ionization coefficient in GaAs MESFET's is extended to HEMT's. Results agree with the hypothesis that impact ionization takes place nearly exclusively in GaAs, and closely follow previously reported data for the electron impact ionization coefficient in <110> GaAs.
引用
收藏
页码:2571 / 2573
页数:3
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