TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF THE HIGH ELECTRON-MOBILITY TRANSISTOR

被引：41

作者：

WIDIGER, D ^{[1
]}

HESS, K ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 07期

关键词：

D O I：

10.1109/EDL.1984.25913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：266 / 269

页数：4

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