Breakdown and low-temperature anomalous effects in 6H SiC JFETs

被引:2
作者
Meneghesso, G [1 ]
Bartolini, A [1 ]
Verzellesi, G [1 ]
Cavallini, A [1 ]
Castaldini, A [1 ]
Canali, C [1 ]
Zanoni, E [1 ]
机构
[1] Univ Padua, Dipartimento Elettron & Informat, I-35131 Padua, Italy
来源
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年
关键词
D O I
10.1109/IEDM.1998.746452
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-stare gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. We demonstrate that surface traps and deep impurity levels can give rise: to anomalous phenomena such as I-D-V-DS kink's in the drain current, dispersion of transconductance, negative thermal coefficient of breakdown voltage.
引用
收藏
页码:695 / 698
页数:4
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