Study of neutron damage in GaAs MESFETs

被引：7

作者：

Meneghesso, G

Paccagnella, A

Camin, DV

Fedyakin, N

Pessina, G

Canali, C

机构：

[1] UNITA INFM,PADUA,ITALY

[2] UNIV MILAN,DIPARTIMENTO FIS,I-20133 MILAN,ITALY

[3] SEZ INFN,I-20133 MILAN,ITALY

[4] UNIV MODENA,DIPARTIMENTO SCI INFORMAZ,I-41100 MODENA,ITALY

[5] INFM,MODENA,ITALY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 03期

关键词：

D O I：

10.1109/23.603762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Implanted channel GaAs MESFETs subjected to neutron irradiation show large modifications of the pinch-off voltage, open-channel saturation current, and transconductance in agreement with previous results. In this work we demonstrate how an experimental technique, based on the frequency dispersion of the transconductance, g(m)(f), and output conductance, g(D)(f), can identify the deep levels induced by neutron irradiation through measurements performed directly on packaged devices. After irradiation, a frequency dispersion of the transconductance has been observed, while it was flat in the unirradiated device. The g(m)(f) curve shape depends on the device bias conditions, and it has permitted for the first time to evaluate the activation energy of different deep levels induced by neutron irradiation in MESFETs.

引用

页码：840 / 846

页数：7

共 13 条

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