Improvements in dynamic and noise performance of cryogenic GaAs monolithic ASICs

被引:6
作者
Camin, DV [1 ]
Fedyakin, N [1 ]
Pessina, G [1 ]
Previtali, E [1 ]
Sironi, M [1 ]
机构
[1] IST NAZL FIS NUCL,I-20133 MILAN,ITALY
关键词
D O I
10.1109/23.507164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed two new ASICs for cryogenic operation using a GaAs ion-implanted MESFET process. A preamplifier chip for LAr calorimetry has white series noise above 1 MHz with a spectral density of 0.32 nV/root Hz. Power dissipation is 66 mW and GBW 1.7 GHz. Operation at 22 mW power dissipation is also possible, with lower noise and speed performance. A cryogenic buffer/LED driver with 0.6% integral non-linearity for 100 mA maximum output current and 8.7 mW standing power dissipation was also developed.
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收藏
页码:1649 / 1655
页数:7
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