NEUTRON RADIATION EFFECTS IN GAAS ION-IMPLANTED METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：20

作者：

JANOUSEK, BK

YAMADA, WE

KRANTZ, RJ

BLOSS, WL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.339901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1678 / 1686

页数：9

共 23 条

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