EXTENSION OF EXISTING MODELS TO ION-IMPLANTED MESFETS

被引:9
作者
DESANTIS, P [1 ]
机构
[1] UNIV NAPLES,I-80134 NAPLES,ITALY
关键词
D O I
10.1109/TMTT.1980.1130132
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:638 / 647
页数:10
相关论文
共 18 条
[1]  
[Anonymous], IEEE T ELECT DEVICES
[2]  
Engelmann R. W. H., 1976, International Electron Devices Meeting. (Technical digest), P351
[3]   BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J].
ENGELMANN, RWH ;
LIECHTI, CA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) :1288-1296
[4]   CHARGE NEUTRALITY IN SEMICONDUCTORS WITH IMPLANTED IMPURITY PROFILES [J].
GRIMSHAW, JA ;
OSBORNE, DN .
SOLID-STATE ELECTRONICS, 1971, 14 (07) :603-&
[5]   SMALL SIGNAL PROPERTIES OF FIELD EFFECT DEVICES [J].
HAUSER, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) :605-+
[6]   LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION [J].
HIGGINS, JA ;
KUVAS, RL ;
EISEN, FH ;
CHEN, DR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :587-596
[7]   CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J].
HOWER, PL ;
BECHTEL, NG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :213-220
[8]   FIELD DISTRIBUTION IN JUNCTION FIELD-EFFECT TRANSISTORS AT LARGE DRAIN VOLTAGES [J].
LEHOVEC, K ;
MILLER, RS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) :273-281
[9]   VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].
LEHOVEC, K ;
ZULEEG, R .
SOLID-STATE ELECTRONICS, 1970, 13 (10) :1415-&
[10]   PROFILE DESIGN FOR DISTORTION REDUCTION IN MICROWAVE FIELD-EFFECT TRANSISTORS [J].
PUCEL, RA .
ELECTRONICS LETTERS, 1978, 14 (06) :204-206