PROFILE DESIGN FOR DISTORTION REDUCTION IN MICROWAVE FIELD-EFFECT TRANSISTORS

被引:21
作者
PUCEL, RA
机构
关键词
D O I
10.1049/el:19780136
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:204 / 206
页数:3
相关论文
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[3]  
PUCEL RA, 1975, ADV ELECTRONICS ELEC
[4]   NOISE CHARACTERISTICS OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J].
STATZ, H ;
HAUS, HA ;
PUCEL, RA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (09) :549-562
[5]   GAAS FETS WITH GRADED CHANNEL DOPING PROFILES [J].
WILLIAMS, RE ;
SHAW, DW .
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