NEUTRON-GAMMA INDUCED DAMAGE MECHANISMS AND SYNERGISTIC EFFECTS IN GAAS-MESFETS

被引：23

作者：

CHANG, JY ^{[1
]}

BADAWI, MH ^{[1
]}

DECICCO, A ^{[1
]}

机构：

[1] TACHON CORP,PLAINSBORO,NJ 08536

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2068 / 2075

页数：8

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