Analysis of the birefringence of a silicon-on-insulator rib waveguide

被引:36
作者
Dai, DX
He, SL [1 ]
机构
[1] Zhejiang Univ, Ctr Opt & Electromagnet Res, Joint Lab Opt Commun, Hangzhou, Peoples R China
[2] Zhejiang Univ, Hangzhou 310027, Peoples R China
[3] Royal Inst Technol, Alfven Lab, Div Electromagnet Theory, S-10044 Stockholm, Sweden
关键词
D O I
10.1364/AO.43.001156
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A detailed analysis of the polarization characteristics (birefringence) of a silicon-on-insulator (SOI) rib waveguide is given. The fundamental TE- and TM-polarized modes of the SOI rib waveguide are calculated by a semivectorial finite-difference method. The rib width and the slab height of the SOI rib waveguide are normalized with respect to the total height of the silicon layer. A general relation between the two normalized parameters for a nonbirefringent SOI rib waveguide is obtained. According to this relation a nonbirefringent SOI rib waveguide can easily be designed. The fabrication tolerance for a nonbirefringent SOI rib waveguide is also analyzed, revealing that the tolerance can be increased by use of a larger total height of the silicon layer. (C) 2004 Optical Society of America.
引用
收藏
页码:1156 / 1161
页数:6
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