Confined and Chemically Flexible Grain Boundaries in Polycrystalline Compound Semiconductors

被引:79
作者
Abou-Ras, Daniel [1 ]
Schmidt, Sebastian S. [1 ]
Caballero, Raquel [1 ]
Unold, Thomas [1 ]
Schock, Hans-Werner [5 ]
Koch, Christoph T. [2 ]
Schaffer, Bernhard [3 ,4 ]
Schaffer, Miroslava [3 ,5 ]
Choi, Pyuck-Pa [6 ]
Cojocaru-Miredin, Oana [6 ]
机构
[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, D-14109 Berlin, Germany
[2] Max Planck Inst Intelligent Syst, D-70569 Stuttgart, Germany
[3] SuperSTEM, STFC Daresbury Labs, Warrington WA4 4AD, Cheshire, England
[4] Univ Glasgow, SUPA Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[5] Dept Engn, Liverpool L69 3BX, Merseyside, England
[6] Max Planck Inst Eisenforsch GmbH, Dept Microstruct Phys & Alloy Design, D-40237 Dusseldorf, Germany
基金
英国工程与自然科学研究理事会;
关键词
atom probe tomography; thin-film solar cells; electron energy-loss spectroscopy; inline electron holography; grain boundaries; ATOM-PROBE; POTENTIAL PROFILES; CUINSE2; ELECTRON; FILMS; LINE;
D O I
10.1002/aenm.201100764
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se2 thin films exhibit only slightly enhanced recombination, as compared with the grain interiors, allowing for very high power-conversion efficiencies of more than 20% in the corresponding solar-cell devices. This work highlights the specific compositional and electrical properties of Cu(In,Ga)Se2 GBs by application of appropriate subnanometer characterisation techniques: inline electron holography, electron energy-loss spectroscopy, and atom-probe tomography. It is found that changes of composition at the GBs are confined to regions of only about 1 nm in width. Therefore, these compositional changes are not due to secondary phases but atomic or ionic redistribution within the atomic planes close to the GBs. For different GBs in the Cu(In,Ga)Se2 thin film investigated, different atomic or ionic redistributions are also found. This chemical flexibility makes polycrystalline Cu(In,Ga)Se2 thin films particularly suitable for photovoltaic applications.
引用
收藏
页码:992 / 998
页数:7
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