GaAs nanowire/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) hybrid solar cells

被引：32

作者：

Chao, Jiun-Jie ^{[1
]}

Shiu, Shu-Chia ^{[1
]}

Hung, Shih-Che ^{[1
]}

Lin, Ching-Fuh ^{[1
,2
,3
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 28期

关键词：

PHOTOVOLTAIC APPLICATIONS; ARRAYS;

D O I：

10.1088/0957-4484/21/28/285203

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, a new type of hybrid solar cell based on a heterojunction between poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays are fabricated by directly performing the nano-etching of GaAs wafer with spun-on SiO(2) nanospheres as the etch mask through inductively coupled plasma reactive ion etching. The PEDOT: PSS adheres to the surface of the GaAs NW arrays to form a p-n junction. The morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT: PSS hybrid solar cells. The suppression of reflectance and the interpenetrating heterojunction interface of GaAs NW arrays offers great improvements in efficiency relative to a conventional planar cell. Compared to the planar GaAs/PEDOT:PSS cells, the power conversion efficiency under AM 1.5 global one sun illumination is improved from 0.29% to 5.8%.

引用

页数：6

共 16 条

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