Blue emitting heterostructure laser diodes

被引：21

作者：

Landwehr, G ^{[1
]}

Waag, A ^{[1
]}

Fischer, F ^{[1
]}

Lugauer, HJ ^{[1
]}

Schull, K ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

PHYSICA E | 1998年 / 3卷 / 1-3期

关键词：

blue emitting laser diodes;

D O I：

10.1016/S1386-9477(98)00231-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

After a brief discussion of the present state of development of blue GaN- and green ZnSe lasers an overview is given of efforts to improve the lifetime of ZnSe-based laser diodes by incorporation of beryllium. Be-chalcogenides have a relatively large strength due to their bonding properties. Because BeTe and ZnSe are almost lattice matched to GaAs, the growth of type II superlattices of high perfection is possible. This allows to produce graded BeTe/ZnSe low resistance contacts to ZnSe, which have performed very satisfactorily. It can be anticipated that by making use of the full potential of Be-chalcogenides in the design of II-VI laser diodes emitting in the green spectral range, the lifetime of such devices can be extended significantly This would allow numerous technical applications. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：158 / 168

页数：11

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