Stretchable Field-Effect-Transistor Array of Suspended SnO2 Nanowires

被引：71

作者：

Shin, Gunchul ^{[3
]}

Yoon, Chang Hoon ^{[3
]}

Bae, Min Young ^{[3
]}

Kim, Yoon Chul ^{[3
]}

Hong, Sahng Ki ^{[3
]}

Rogers, John A. ^{[1
,2
]}

Ha, Jeong Sook ^{[3
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA

[3] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea

来源：

SMALL | 2011年 / 7卷 / 09期

关键词：

SILICON INTEGRATED-CIRCUITS; ELECTRONICS; OPTOELECTRONICS; NETWORKS; DESIGNS;

D O I：

10.1002/smll.201100116

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Stretchable device systems with suspended SnO2 nanowires (NWs) as channel materials: Oxygen plasma is used to remove the underlying polymer to float the NWs. These suspended NW field-effect transistors exhibit high electrical performance. By adopting a neutral mechanical plane and curved interconnection, electrical performance of the suspended NW field-effect transistors is maintained under stretching up to approximately 40%. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1181 / 1185

页数：5

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