Titanium-containing hydrofluoric acid pretreatment for aluminum chemical vapor deposition

被引：11

作者：

Sugai, K ^{[1
]}

Okabayashi, H ^{[1
]}

Kishida, S ^{[1
]}

Shinzawa, T ^{[1
]}

机构：

[1] NEC CORP LTD,RES & DEV GRP,TSUKUBA,IBARAKI 305,JAPAN

来源：

THIN SOLID FILMS | 1996年 / 280卷 / 1-2期

关键词：

titanium; chemical vapour deposition; aluminium; surface morphology;

D O I：

10.1016/0040-6090(95)08207-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new solution pretreatment has been developed to improve the surface morphology of chemical vapor deposition (CVD) Al films on SiO2. This method is simple: substrates are dipped into Ti-containing hydrofluoric acid and are dried before Al CVD. With this pretreatment, the surface morphology of the deposited Al films is improved. This improvement in surface morphology may be attributable to enhancement in Al nucleation due to the Ti adsorbed from the solution onto the substrate surface. Furthermore, the Al deposition temperature on SiO2 was able to be reduced from 260 to 210 degrees C. Lowering of the deposition temperature also improved the surface morphology of Al films, Moreover, Al films deposited at the lower temperature have a stronger (111) orientation, which is expected to provide higher electromigration resistance.

引用

页码：142 / 146

页数：5

共 14 条

[1]

AMAZAWA T, 1986, 18TH C SOL STAT DEV, P755

[2]

CHEUNG KP, 1990, 7TH P INT IEEE VLSI, P303

[3]

COOKE MJ, 1982, SOLID STATE TECHNOL, V25, P62

[4] ALUMINUM FILMS PREPARED BY METAL ORGANIC LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].