Chemical interactions in noncontact AFM on semiconductor surfaces:: Si(111), Si(100) and GaAs(110)

被引：15

作者：

Pérez, R

Stich, I

Payne, MC

Terakura, K

机构：

[1] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain

[2] Slovak Univ Technol Bratislava, Dept Phys, SK-81219 Bratislava, Slovakia

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[4] Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan

[5] Natl Inst Adv Interdisciplinary Res, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 140卷 / 3-4期

关键词：

atomic force microscopy (AFM); noncontact; total-energy pseudopotential calculations; force gradients; atomic resolution; Si(111); Si(100); GaAs(110);

D O I：

10.1016/S0169-4332(98)00548-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Total-energy pseudopotential calculations are used to study the imaging process in noncontact atomic force microscopy (AFM) on Si(lll), Si(100) and GaAs(110) surfaces. The chemical bonding interaction between a localised dangling bond on the atom at the apex of the tip and the dangling bonds on the adatoms in the surface is shown to dominate the forces and the force gradients and, hence, to provide atomic resolution. The lateral resolution capabilities are tested in both the Si(100) and the GaAs(110) surfaces. Zn the first case, the two atoms in a dimer can be resolved due to the dimer flip induced by the interaction with the tip during the scan, while in the GaAs(110), we identify the anion sublattice as the one observed in the experimental images. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：320 / 326

页数：7

共 14 条

[1] TIP-SURFACE INTERACTIONS IN SCANNING-TUNNELING-MICROSCOPY [J].