Fabrication and characterization of indium-doped p-type SnO2 thin films

被引：91

作者：

Ji, ZG ^{[1
]}

He, ZJ ^{[1
]}

Song, YL ^{[1
]}

Liu, K ^{[1
]}

Ye, ZZ ^{[1
]}

机构：

[1] Zhejiang Univ, CMSCE, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 259卷 / 03期

基金：

中国国家自然科学基金;

关键词：

p-type doping; thin films; SnO2;

D O I：

10.1016/j.jcrysgro.2003.07.003

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

p-Type transparent SnO2 thin films were successfully fabricated by sol-gel dip-coating method using indium as acceptor dopant. The prepared films were characterized by X-ray diffraction, Hall effect measurement, and UV-visible absorption. It was found from the XRD results that all the films with In/Snless than or equal to0.4 were rutile-type structure. Hall effect measurement showed that the conduction type was dependent on the process temperature. For In/Snless than or equal to0.2 and the process temperature above 450degreesC, the films were p-type, while for the process temperatureless than or equal to450degreesC, the films were n-type. It was found that 525degreesC was the optimum processing temperature to obtain p-type SnO2 with highest hole concentration. For In/Sn around 0.3, process temperature was very critical to the conducting type, and for n/Sngreater than or equal to0.4, the film was n-type conducting. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：282 / 285

页数：4

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