Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells

被引:46
作者
Ota, K [1 ]
Usami, N [1 ]
Shiraki, Y [1 ]
机构
[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan
关键词
microscopic photoluminescence; photomask; homogeneous line width; dephasing relaxation; interface roughness;
D O I
10.1016/S1386-9477(98)00117-9
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We succeeded in observing the temperature dependence of the exciton line width in the range of several ten mu eV in the self-assembled quantum dots (QDs) by combining microscopic photoluminescence (mu-PL) and submicron photomasks. It was found that the line width of QDs, which was believed to be temperature-independent, does depend on temperature, suggesting the contribution of acoustic phonons to the dephasing process. Moreover, this method was found to be powerful in probing the microscopic structures of heterointerfaces of quantum wells (QWs) and we clarified the difference between (1 0 0) and (4 1 1) heterointerfaces, as evidenced by the temperature-dependent mu-PL spectra. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:573 / 577
页数:5
相关论文
共 19 条
  • [1] PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES
    BOCKELMANN, U
    BASTARD, G
    [J]. PHYSICAL REVIEW B, 1990, 42 (14): : 8947 - 8951
  • [2] Microphotoluminescence studies of single quantum dots .1. Time-resolved experiments
    Bockelmann, U
    Heller, W
    Filoramo, A
    Roussignol, P
    [J]. PHYSICAL REVIEW B, 1997, 55 (07): : 4456 - 4468
  • [3] Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots
    Brusaferri, L
    Sanguinetti, S
    Grilli, E
    Guzzi, M
    Bignazzi, A
    Bogani, F
    Carraresi, L
    Colocci, M
    Bosacchi, A
    Frigeri, P
    Franchi, S
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (22) : 3354 - 3356
  • [4] VISIBLE PHOTOLUMINESCENCE FROM N-DOT ENSEMBLES AND THE LINEWIDTH OF ULTRASMALL ALYIN1-YAS ALXGA1-XAS QUANTUM DOTS
    FAFARD, S
    LEON, R
    LEONARD, D
    MERZ, JL
    PETROFF, PM
    [J]. PHYSICAL REVIEW B, 1994, 50 (11): : 8086 - 8089
  • [5] Fine structure splitting in the optical spectra of single GaAs quantum dots
    Gammon, D
    Snow, ES
    Shanabrook, BV
    Katzer, DS
    Park, D
    [J]. PHYSICAL REVIEW LETTERS, 1996, 76 (16) : 3005 - 3008
  • [6] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS
    GRUNDMANN, M
    CHRISTEN, J
    LEDENTSOV, NN
    BOHRER, J
    BIMBERG, D
    RUVIMOV, SS
    WERNER, P
    RICHTER, U
    GOSELE, U
    HEYDENREICH, J
    USTINOV, VM
    EGOROV, AY
    ZHUKOV, AE
    KOPEV, PS
    ALFEROV, ZI
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (20) : 4043 - 4046
  • [7] NEAR-FIELD SPECTROSCOPY OF THE QUANTUM CONSTITUENTS OF A LUMINESCENT SYSTEM
    HESS, HF
    BETZIG, E
    HARRIS, TD
    PFEIFFER, LN
    WEST, KW
    [J]. SCIENCE, 1994, 264 (5166) : 1740 - 1745
  • [8] Temperature and excitation dependence of photoluminescence line shape in InAs/GaAs quantum-dot structures
    Lee, H
    Yang, WD
    Sercel, PC
    [J]. PHYSICAL REVIEW B, 1997, 55 (15): : 9757 - 9762
  • [9] STRUCTURAL AND OPTICAL-PROPERTIES OF SELF-ASSEMBLED INGAAS QUANTUM DOTS
    LEONARD, D
    FAFARD, S
    POND, K
    ZHANG, YH
    MERZ, JL
    PETROFF, PM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2516 - 2520
  • [10] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS
    MARZIN, JY
    GERARD, JM
    IZRAEL, A
    BARRIER, D
    BASTARD, G
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (05) : 716 - 719