Development and characterization of CrN films by ion beam enhanced deposition for improved wear resistance

被引:31
作者
Fu, YQ [1 ]
Zhu, XD
Tang, B
Hu, XF
He, JW
Xu, KW
Batchelor, AW
机构
[1] Nanyang Technol Univ, Sch Mech & Prod Engn, Mat Lab, Singapore 639798, Singapore
[2] Xian Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
关键词
ion beam enhanced deposition; CrN film; microstructure; crystalline structure; microhardness; tribology properties;
D O I
10.1016/S0043-1648(98)00189-6
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Chromium nitride (CrN) films were synthesized by ion beam enhanced deposition (IBED) process which involves using an argon ion beam to sputter the chromium target while using a nitrogen ion beam to bombard the deposited film. The surface and cross-section morphologies of CrN films were studied by scanning electron microscope (SEM) and atomic force microscope (AFM). The distribution of chemical composition was analyzed by X-ray photoelectron spectroscopy (XPS). The crystalline structures of thin films were identified by X-ray diffraction (XRD). The adhesion strength of film-substrate system was evaluated by the scratch test. Results showed that the ion bombardment energy and ion beam current density had significant effects on surface morphology, crystalline structure and adhesion strength of the deposited CrN films, With an increase in bombardment energy, the microhardness of the IBED CrN films increased, but the adhesion strength of the films decreased. Ion beam current density had a significant sputtering effect on the deposited CrN films. Wear tests were performed on a block-on-ring system under lubricated conditions and a ball-on-flat system under dry sliding conditions The data from both experiments showed that: (1) the wear resistance of GCr15 steel has been improved significantly after being coated with IBED CrN him; (2) thin films synthesized at lower bombardment energy or lower ion beam current density had better tribological properties, (C) 1998 Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码:159 / 166
页数:8
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