Surfactant effect of hydrogen for nickel growth on Si(111)7X7 surface

被引:38
作者
Murano, K
Ueda, K
机构
[1] OSAKA UNIV, DEPT APPL PHYS, SUITA, OSAKA 565, JAPAN
[2] TOYOTA TECHNOL INST, TENPAKU KU, NAGOYA, AICHI 468, JAPAN
关键词
desorption induced by electronic transitions (DIET); electron stimulated desorption (ESD); hydrogen; low energy electron diffraction (LEED); nickel; silicides; silicon; surface diffusion;
D O I
10.1016/0039-6028(96)00290-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this report we will describe a 'surfactant effect' of hydrogen for nickel on Si(111)7 x 7 surface terminated by atomic hydrogen prior to Ni-deposition. For hydrogen detection, time-of-flight type electron-stimulated desorption (TOF-ESD) spectroscopy was used complementary with Auger analysis, LEED and RHEED, 2-monolayer (ML) Ni film was grown on a Si(111)7 x 7 surface in layer-by-layer growth mode and changed to 3-dimensional Stranski-Krastanov mode over 2 ML. The 7 x 7 LEED pattern was observed to 2 ML(-) of Ni. The Si-LVV Anger peak was observed to IO ML. In contrast, a hydrogen-terminated surface showed d-7 x 7 structure where the ESD measurement showed 1.5 ML of hydrogen, the Si-LVV Auger peak had disappeared at 7 ML of Ni taking layer-by-layer mode, namely, Frank-Van der Merwe growth mode.
引用
收藏
页码:910 / 916
页数:7
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