Growth of Few-Layer Graphene on a Thin Cobalt Film on a Si/SiO2 Substrate

被引：36

作者：

Kim, Eunho ^{[1
,2
]}

An, Hyosub ^{[1
,2
]}

Jang, Hyunchul ^{[1
,2
]}

Cho, Won-Ju ^{[3
]}

Lee, Naesung ^{[1
,2
]}

Lee, Wan-Gyu ^{[4
]}

Jung, Jongwan ^{[2
]}

机构：

[1] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea

[2] Sejong Univ, Inst Nano & Adv Mat Engn, Seoul 143747, South Korea

[3] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

[4] Natl Nano Fab Ctr, Taejon 305806, South Korea

来源：

CHEMICAL VAPOR DEPOSITION | 2011年 / 17卷 / 1-3期

关键词：

LARGE-AREA; CARBON NANOTUBES; GRAPHITE; SINGLE; ADSORPTION; DEPOSITION; PT(111);

D O I：

10.1002/cvde.201004296

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Few-layered sheets of graphene were synthesized on polycrystalline thin Co and Ni films by low pressure chemical vapor deposition. On average, thinner layers of graphene were synthesized on Co than on the conventional Ni at the same process conditions, but slightly higher defects were detected on Co-grown graphene layers than on Ni-grown ones. Possible explanations for this are suggested.

引用

页码：9 / 14

页数：6

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