Scanning probe microscopy investigation of nanometer structures produced by irradiation with 200 MeV ions

被引：15

作者：

Biro, LP

Gyulai, J

Havancsak, K

机构：

[1] KFKI, Res Inst Mat Sci, H-1525 Budapest, Hungary

[2] Eotvos Lorand Univ, Inst Solid State Phys, H-1088 Budapest, Hungary

来源：

VACUUM | 1998年 / 50卷 / 3-4期

基金：

匈牙利科学研究基金会;

关键词：

D O I：

10.1016/S0042-207X(98)00051-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanometer size structures created by irradiation with 215 MeV Ne, and 209 MeV Kr ions on the surface of muscovite mica (MM), highly oriented pyrolitic graphite (HOPG), and single crystal Si were investigated by scanning tunnelling microscopy (STM), and atomic force microscopy (AFM). The comparison of the structures observed on these three materials shows that: (i) high energy heavy ions are suitable to produce well individualised, nanometer size structures without any further developing process being needed; and (ii) the character of the structures can be "tailored" to a certain extent by using different target-ion combinations, and different angles of incidence. The layered nature of MM and HOPG make these materials particularly suitable for the creation of various nanometer size structures, their behaviour being more close to each other than to the covalent Si (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：263 / 272

页数：10

共 32 条

[11] Use of atomic-force microscopy and of a parallel irradiation geometry for in-depth characterization of damage produced by swift Kr ions in silicon [J].